Growth of InP on Si substrates by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101209
Reference5 articles.
1. All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm
2. Growth and characterization of InP epilayers on ZnSehen;coated Si substrates by low‐pressure metalorganic vapor phase epitaxy
3. Substrate orientation and processing effects on GaAs/Si misorientation in GaAs-on-Si grown by MBE
4. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
5. Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition
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