Growth and characterization of InP epilayers on ZnSehen;coated Si substrates by low‐pressure metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100383
Reference14 articles.
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4. Growth of GaAs on Si by MOVCD
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Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Supercritical fluid chemical deposition of thin InP films. A new approach and precursors;Thin Solid Films;1996-06
2. InP heteroepitaxy on Si substrates in In-PH3-HC1-H2 systems;Journal of Crystal Growth;1994-07
3. Relaxed lattice-mismatched growth of III–V semiconductors;Progress in Crystal Growth and Characterization of Materials;1991-01
4. Material properties of InP‐on‐Si grown by low‐pressure organometallic vapor‐phase epitaxy;Journal of Applied Physics;1989-02
5. Characterization of InP/GaAs/Si structures grown by atmospheric pressure metalorganic chemical vapor deposition;Journal of Applied Physics;1989-02
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