Monolithic integration of GaAs/AlGaAs modulation‐doped field‐effect transistors andN‐metal‐oxide‐semiconductor silicon circuits
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95952
Reference8 articles.
1. Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon
2. High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy
3. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
4. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
5. Metal‐semiconductor field‐effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy
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1. Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs;IEEE Electron Device Letters;2009-10
2. Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates;Journal of Applied Physics;2003-04
3. Initial stages of organometallic-vapour-phase epitaxial AIGaAs grown on (001) Si;Journal of Materials Science: Materials in Electronics;1994-10
4. Relationship between the optical and structural properties in GaAs heteroepitaxial layers grown on Si substrates;Journal of Crystal Growth;1994-08
5. Influence of thermal annealing and the incorporation of AlGaAs/GaAs superlattices on the structural and optical properties of GaAs on Si;Semiconductor Science and Technology;1993-12-01
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