Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97728
Reference7 articles.
1. Overlength modes of InP transferred-electron devices
2. Influence of interfacial structure on the electronic properties of SiO2/InP MISFET’s
3. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
4. Room‐temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition
5. Adducts in the growth of III–V compounds
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