Overlength modes of InP transferred-electron devices
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19740181?crawler=true&mimetype=application/pdf
Reference4 articles.
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Experimental investigation of limit space charge accumulation mode operation in a semi-insulating GaAs photoconductive semiconductor switch;Journal of Semiconductors;2013-07
2. Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition;Applied Physics Letters;1987-06-15
3. Current limiting cathodes for non transit-time limited operation of InP TED's in the 100 GHz window;Physica B+C;1985-03
4. Low-power high-speed InP MISFET direct-coupled FET logic;IEEE Transactions on Electron Devices;1984-06
5. A high-speed monolithic InP MISFET integrated logic inverter;IEEE Transactions on Electron Devices;1981-02
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