Selective epitaxy of GaAs, AlxGa1−xAs, and InxGa1−xAs-Reference-Cited by-同舟云学术

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Selective epitaxy of GaAs, AlxGa1−xAs, and InxGa1−xAs

Published:1991-01 Issue:1-4 Volume:107 Page:116-128
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kuech T.F.,Goorsky M.S.,Tischler M.A.,Palevski A.,Solomon P.,Potemski R.,Tsai C.S.,Lebens J.A.,Vahala K.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Low‐threshold room‐temperature embedded heterostructure lasers

2. Integrated optical bent waveguide with grown 45° mirror by selective liquid‐phase epitaxy of GaAs

3. Orientation dependent growth and luminescence of selective GaAs-Sn LPE

4. Selective growth of GaAs in the MOMBE and MOCVD systems

5. Selective growth of AlxGa1−xAs embedded in etched grooves on GaAs by low-pressure OMVPE

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2. Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapor Phase Epitaxy (HVPE);Journal of Crystal Growth;2013-10

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4. Epitaxial growth of a nanoscale, vertically faceted, one-dimensional, high-aspect ratio grating in III-V materials for integrated photonics;Applied Physics Letters;2005-08-15

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