MOCVD of InP and mass transport on structured InP substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Selective epitaxial growth of GaAs by low-pressure MOVPE
2. Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy
3. Lateral Growth Process of GaAs over Tungsten Gratings by Metalorganic Chemical Vapor Deposition
4. Low Pressure Metalorganic Vapor Phase Epitaxy of InP in a Vertical Reactor
5. Technical Digest, Topical Meeting on Integrated and Guide-Wave Optics;Liau,1982
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