OMCVD growth of InP and InGaAs on InP non-planar substrates patterned with {110} quasi facets
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference32 articles.
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1. Selective growth of InP/InGaAs 〈010〉 ridges: Physical and optical characterization;Journal of Crystal Growth;2008-03
2. Study of ordinary facets revealed in (100) InP by etching in HCl;Materials Science and Engineering: B;2007-03
3. CCl4-Based RIE Pattern Transfer into Facets of Mesas Formed by Wet Etching in InP(100);Electrochemical and Solid-State Letters;2006-02-01
4. Formation of GaAs three-dimensional objects using AlAs “facet-forming” sacrificial layer and H3PO4, H2O2, H2O based solution;Journal of Applied Physics;2003-10
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