High electron mobility InP grown by solid source molecular beam epitaxy-Reference-Cited by-同舟云学术

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High electron mobility InP grown by solid source molecular beam epitaxy

Published:2020-06 Issue: Volume:112 Page:105012
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Wang Hongzhen,Zhu Yicheng,Gu Yi,Chen Pingping,Wang Wei,Chen Xiren,Yang Bo,Li Tao,Shao Xiumei,Li Xue,Gong Haimei

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. Band parameters for III-V compound semiconductors and their alloys;Vurgaftman;J. Appl. Phys.,2001

2. InP photonic circuits using generic integration;Williams;Photon. Res.,2015

3. Heteroepitaxy of semiconductor thin films;Gu;J. Semiconduct.,2019

4. Electrically pumped 1.5μm InP-based quantum dot microring lasers directly grown on (001) Si;Zhu;Optic Lett.,2019

5. Noise characteristics analysis of short wave infrared InGaAs focal plane arrays;Yu;Infrared Phys. Technol.,2017

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1. InP/PtS2 heterojunctions: Z-scheme photocatalysts with enhanced light absorption for high solar-to-hydrogen conversion efficiency;International Journal of Hydrogen Energy;2024-09

2. Radiation damage of InGaAs avalanche photodiode under gamma ray irradiation;Infrared Physics & Technology;2024-08

3. The Impact of Manufacturing Imperfections on the Performance of Metalenses and a Manufacturing-Tolerant Design Method;Micromachines;2022-09-16

4. Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices;IEEE Transactions on Electron Devices;2022-09

5. InP and InGaAs grown on InP substrate by molecular beam epitaxy;MATEC Web of Conferences;2022

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