Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices-Reference-Cited by-同舟云学术

Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices

Published:2022-09 Issue:9 Volume:69 Page:4944-4949
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Guo Zilu¹^ORCID,Wang Wenjuan¹^ORCID,Li Yangjun¹,Qu Huidan¹,Fan Liuyan¹,Chen Xiren¹,Zhu Yicheng¹,Gu Yue¹,Wang Yajie²^ORCID,Zheng Changlin²^ORCID,Chen Pingping¹,Lu Wei¹

Affiliation:

1. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China

2. State Key Laboratory of Surface Physics and the Department of Physics, Fudan University, Shanghai, China

Funder

National Natural Science Foundation of China

Shanghai Municipal Science and Technology Major Project

Strategic Priority Research Program of Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9864631/09839448.pdf?arnumber=9839448

Reference23 articles.

1. Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy

2. InGaAsP–InP Avalanche Photodiodes for Single Photon Detection

3. Single photon avalanche diodes (SPADs) for 1.5 μm photon counting applications

4. Dark current suppression in metamorphic In0.83Ga0.17As photodetectors with In0.66Ga0.34As/InAs superlattice electron barrier

5. In0.53Ga0.47As photodiodes with dark current limited by generation‐recombination and tunneling

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