Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1513891
Reference19 articles.
1. Interface quality and electron transfer at the GaInP on GaAs heterojunction
2. Interface control in GaAs/GaInP superlattices grown by OMCVD
3. Characterization of InP to GaInAs and GaInAs to InP interfaces using tilted cleaved corner TEM
4. Study of interrupted MOVPE growth of InGaAs/InP superlattice
5. Interface properties of strained InGaAs/InP quantum wells grown by LP-MOVPE
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2. Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices;IEEE Transactions on Electron Devices;2022-09
3. Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique;Science Advances;2022-01-21
4. Dark Current Random Telegraph Signals in Short-Wavelength Infrared Image Sensors Based on InGaAs;IEEE Transactions on Nuclear Science;2021-05
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