Study of interrupted MOVPE growth of InGaAs/InP superlattice
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Optical properties of (AlAs)n(GaAs)nsuperlattices grown by metalorganic chemical vapor deposition
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1. Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation;Materials Science in Semiconductor Processing;2023-01
2. Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique;Science Advances;2022-01-21
3. Quantitative depth profile analysis of InP/InGaAs hetero-interfaces by as carry-over;Materials Science in Semiconductor Processing;2020-12
4. Interface analysis on MOVPE grown InP–GaInAs–InP double heterostructures for application in infrared solar cells;Solar Energy Materials and Solar Cells;2016-04
5. Observation of optical bleaching at 1.06μm in AlInAs/AlGaInAs multiple quantum wells;Journal of Crystal Growth;2010-04
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