Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95073
Reference1 articles.
1. Selective MOCVD epitaxy for optoelectronic devices
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4. In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system;Review of Scientific Instruments;2007-07
5. Selective epitaxial growth of GaAs on Ge by MOCVD;Journal of Crystal Growth;2006-12
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