The effect of growth interruption on the photoluminescence linewidth of GaAs/InGaAs quantum wells grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Molecular beam epitaxy growth interrupt and temperature studies on doped and undoped single quantum well pseudomorphic structures
2. Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high‐energy electron diffraction intensity dynamics study
3. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
4. Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothing
5. Reduction of well width fluctuation in AlGaAs-GaAs single quantum well by growth interruption during molecular beam epitaxy
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1. Enhanced mobility of ternary InGaAs quantum wells through digital alloying;Physical Review Materials;2024-06-26
2. Effect of growth interruption time and growth temperature on the natural formation of InGaAs/AlGaAs quantum disk structures on GaAs (311)B substrates;Journal of Applied Physics;2000-01-15
3. Influence of growth interruption on the heterointerface morphology ofInGaAsGaAs strained quantum wells;Journal of Crystal Growth;1996-12
4. Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasers;Journal of Crystal Growth;1994-12
5. Metalorganic chemical vapor deposition growth of high-quality and highly uniform strained InGaAs quantum wells in a high-speed rotating-disk reactor;Journal of Crystal Growth;1994-12
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