Effect of growth interruption time and growth temperature on the natural formation of InGaAs/AlGaAs quantum disk structures on GaAs (311)B substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371935
Reference33 articles.
1. Self-organized growth of strained InGaAs quantum disks
2. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
3. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
4. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
5. Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Deep levels in GaAs/Al0.78Ga0.22As heterostructures;Physica B: Condensed Matter;2007-12
2. SURFACE MORPHOLOGY EVOLUTION OF STRAINED InAs/GaAs(331)A FILMS;International Journal of Nanoscience;2006-12
3. Surface morphology control of strained InAs∕GaAs(331)A films: From nanowires to island-pit pairs;Applied Physics Letters;2005-01-03
4. High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer;Journal of Crystal Growth;2004-07
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