Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy
2. The effect of growth interruption on the photoluminescence linewidth of GaAs/InGaAs quantum wells grown by molecular beam epitaxy
3. Formation and morphology of InAs/GaAs heterointerfaces
4. Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy
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1. MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors;Journal of Physics D: Applied Physics;2020-01-22
2. Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications;OPT APPL;2016
3. 1.82-\mu m distributed feedback lasers with InGaAs/InGaAsP multiple-quantum wells for a H2O sensing system;Chinese Optics Letters;2013
4. MOVPE growth of InGaAs/GaAsP-MQWs for high-power laser diodes studied by reflectance anisotropy spectroscopy;Journal of Crystal Growth;2009-02
5. Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD;Journal of Crystal Growth;2002-04
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