Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD-Reference-Cited by-同舟云学术

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Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD

Published:2002-04 Issue: Volume:237-239 Page:264-268
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Marmalyuk A.A.,Govorkov O.I.,Petrovsky A.V.,Nikitin D.B.,Padalitsa A.A.,Bulaev P.V.,Budkin I.V.,Zalevsky I.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Surface segregation in III–V alloys

2. Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

3. Detection and reduction of indium segregation during molecular-beam epitaxial growth of InGaAs/GaAs using in situ reflection mass spectrometry

4. Indium desorption from strained InGaAs/GaAs quantum wells grown by molecular beam epitaxy

5. Surface chemistry evolution during molecular beam epitaxy growth of InGaAs

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1. Epitaxial growth conditions and interface quality of InGaAs/GaAsP multiple quantum wells;Materials Science in Semiconductor Processing;2024-12

2. 980 nm electrically pumped continuous lasing of QW lasers grown on silicon;Optics Express;2023-04-24

3. Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells;Chinese Physics B;2023-03-01

4. Effect of variable temperature growth on the crystal quality and surface morphology characteristics of InGaAs/GaAs MQWs obtained via MOCVD;Twelfth International Conference on Information Optics and Photonics;2021-11-01

5. Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD;Materials Science in Semiconductor Processing;2021-11

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