Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107835
Reference7 articles.
1. Surface segregation in III–V alloys
2. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
3. Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures
4. Effect of indium replacement by gallium on InAs/GaAs quantized levels
5. Energy levels of strainedInxGa1−xAs-GaAs superlattices
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