Energy levels of strainedInxGa1−xAs-GaAs superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.12650/fulltext
Reference23 articles.
1. Optical investigation of a new type of valence-band configuration inInxGa1−xAs-GaAs strained superlattices
2. Low temperature photoluminescence of GaxIn1−xAs/GaAs strained layer superlattices
3. Optical characterization of pseudomorphic InxGa1−xAs–GaAs single‐quantum‐well heterostructures
4. Determination of band offsets in AlGaAs/GaAs and InGaAs/GaAs multiple quantum wells
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1. Effects of strain and composition distribution on the optical characteristics of GaAs/InGaAlAs/GaAs double asymmetric tunnel-coupled quantum wells;Optical Materials;2024-09
2. Optical properties of AlxInyGa1−x−yAs/AlzGawIn1−z−wAs quantum wells under electric and magnetic fields for telecommunication applications;The European Physical Journal Plus;2023-02-04
3. Determination of band offsets in strained InAsxP1−x/InP quantum well by capacitance voltage profile and photoluminescence spectroscopy;Journal of Applied Physics;2011-04-15
4. Exciton and polariton dispersion curves ofInxGa1−xAs∕GaAs(001)superlattice quantum wells: Model calculation;Physical Review B;2007-02-14
5. Determination of band offsets in strainedInxGa1−xAs∕GaAsquantum wells by capacitance-voltage profiling and Schrödinger-Poisson self-consistent simulation;Physical Review B;2004-08-25
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