Effect of indium replacement by gallium on InAs/GaAs quantized levels
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. Nanoscopy of Phase Separation in InxGa1–xN Alloys;ACS Applied Materials & Interfaces;2016-08-26
2. Indium segregation measured in InGaN quantum well layer;Scientific Reports;2014-10-23
3. The effects of both surface segregation of In atoms and strain on the confinement profile of InGaAs/GaAs multi quantum wells;Materials Science and Engineering: C;2006-03
4. Blueshifts of emission energy from InAs quantum dots in GaAs matrix due to narrowed interdot spacing: a token of the integrity of a nanostructure;Applied Physics A;2005-09
5. Comparison of the Strain-modified Band Gap Energies of Truncated and Untruncated InAs Quantum Dots in GaAs Matrix at Varying Inter-dot Spacings;Journal of the Physical Society of Japan;2004-12-15
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