Photoluminescence from GaAs/AlGaAs quantum wells with InAs monomolecular planes grown by flow-rate modulation epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference5 articles.
1. InAs monomolecular plane in GaAs grown by flow‐rate modulation epitaxy
2. Improved flatness in GaAs/AlGaAs heterointerfaces grown by flow‐rate modulation epitaxy
3. Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
4. Extremely Sharp Photoluminescence from InGaAs/GaAs Quantum Wells Grown by Flow-Rate Modulation Epitaxy
5. Photocurrent spectroscopic observation of interband transitions in GaAs-AlGaAs quantum wells under an applied high electric field
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1. Photoluminescence Quenching by Optical Bias in AlGaAs/GaAs Single Quantum Wells;Japanese Journal of Applied Physics;2001-11-15
2. Theory of incompletely isovalent -doped semiconductors;Journal of Physics: Condensed Matter;1997-06-23
3. Optical investigations on isovalent δ layers in III‐V semiconductor compounds;Journal of Applied Physics;1995-06-15
4. Reduced mass of an exciton in a monolayer‐wide‐InAs/GaAs quantum well from magnetophotoluminescence measurements;Applied Physics Letters;1994-04-18
5. Effect of indium replacement by gallium on InAs/GaAs quantized levels;Surface Science;1992-01
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