Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106565
Reference9 articles.
1. InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency
2. Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy
3. AN EFFICIENT LARGE OPTICAL CAVITY INJECTION LASER
4. Performance characteristics of GaInAs/GaAs large optical cavity quantum well lasers
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1. InGaAs/AlGaAs MQWs grown by MBE: Optimizing GaAs insertion layer thickness to enhance interface quality and luminescent property;Materials Science in Semiconductor Processing;2024-09
2. Effect of growth temperature on performance of AIGaAs/lnGaAs/GaAs QW laser diodes;Journal of Electronic Materials;1996-02
3. Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasers;Journal of Crystal Growth;1994-12
4. Carbon‐doped impurity induced layer disorder 0.98 μm lasers;Journal of Applied Physics;1994-07
5. Alternative Group V Precursors for the Growth of Al-Based III-V Epitaxial Layers by OMVPE;MRS Proceedings;1992
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