Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109046
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1. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
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3. In situprobing at the growth temperature of the surface composition of (InGa)As and (InAl)As
4. In situprobing at the growth temperature of the surface composition of (InGa)As and (InAl)As
5. Photovoltaic GaAs quantum well infrared detectors at 4.2 μm using indirect AlxGa1−xbarriers
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1. Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells;Chinese Physics B;2023-03-01
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3. Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images;Ultramicroscopy;2013-08
4. Resonant photonic band gap structures realized from molecular-beam-epitaxially grown InGaAs∕GaAs Bragg-spaced quantum wells;Journal of Applied Physics;2006-09-15
5. InAs Quantum Dots;Transmission Electron Microscopy of Semiconductor Nanostructures: Analysis of Composition and Strain State;2003
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