Molecular beam epitaxy growth interrupt and temperature studies on doped and undoped single quantum well pseudomorphic structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107905
Reference4 articles.
1. Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wells
2. Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothing
3. Electron mobilities in modulation-doped GaAs-(AlGa)As heterostructures
4. Photoluminescence study of undoped and modulation-doped pseudomorphicAlyGa1−yAs/InxGa1−xAS/AlyGa1−yAs single quantum wells
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1. Effects of real-time monitored growth interrupt on crystalline quality of AlN epilayer grown on sapphire by molecular beam epitaxy;Journal of Crystal Growth;2009-07
2. Influence of growth interruption on the heterointerface morphology ofInGaAsGaAs strained quantum wells;Journal of Crystal Growth;1996-12
3. Indium desorption from strained InGaAs/GaAs quantum wells grown by molecular beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07
4. The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy;Journal of Materials Research;1993-12
5. The effect of growth interruption on the photoluminescence linewidth of GaAs/InGaAs quantum wells grown by molecular beam epitaxy;Journal of Crystal Growth;1993-07
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