Photoluminescence study of undoped and modulation-doped pseudomorphicAlyGa1−yAs/InxGa1−xAS/AlyGa1−yAs single quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.3013/fulltext
Reference20 articles.
1. Effect of interface structure on photoluminescence of InGaAs/GaAs pseudomorphic single quantum wells
2. Atomistic nature of heterointerfaces in III-V semiconductor-based quantum-well structures and its consequences for photoluminescence behavior
3. New evidence of extensive valence-band mixing in GaAs quantum wells through excitation photoluminescence studies
4. Large valence-band offset in strained-layerInxGa1−xAs-GaAs quantum wells
5. Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grownInxGa1−xAs/GaAs quantum wells
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1. Use of micro-photoluminescence as a contactless measure of the 2D electron density in a GaAs quantum well;Applied Physics Letters;2017-06-26
2. Resonant photonic band gap structures realized from molecular-beam-epitaxially grown InGaAs∕GaAs Bragg-spaced quantum wells;Journal of Applied Physics;2006-09-15
3. Effect of interwall surface roughness correlations on optical spectra of quantum well excitons;Physical Review B;2005-04-05
4. Interface disorder and inhomogeneous broadening of quantum well excitons: Do narrow lines always imply high-quality interfaces?;Applied Physics Letters;2004-09-27
5. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces;Journal of Applied Physics;2001-09
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