Influence of growth interruption on the heterointerface morphology ofInGaAsGaAs strained quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption
2. Inequivalence of normal and inverted interfaces of molecular-beam epitaxy grown AlGaAs/GaAs quantum wells
3. Photoluminescence of GaAs quantum wells grown by molecular beam epitaxy with growth interruptions
4. Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE
5. Interface roughness of GaAs‐AlAs quantum wells grown by molecular‐beam epitaxy: Misorientation effects
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1. Effect of substrate inclination angle on the evaporation-induced self-assembly of CsPbBr3 thin films;Journal of Science: Advanced Materials and Devices;2023-12
2. Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells;Applied Sciences;2021-09-17
3. Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells;Nanoscale;2016
4. Growth Interruption Effects of GaAs/AlGaAs Quantum Wells Grown by Molecular Beam Epitaxy;Journal of the Korean Vacuum Society;2010-09-30
5. The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods;Journal of Crystal Growth;2009-09
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