Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption
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Published:1986-07
Issue:4
Volume:4
Page:1014
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
138 articles.
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