Photoluminescence of GaAs quantum wells grown by molecular beam epitaxy with growth interruptions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104551
Reference10 articles.
1. Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature
2. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
3. Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wells
4. Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruption
5. Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices
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