Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Proc. Intern. Symp. on the Foundation of Quantum Mechanics;Sakaki,1984
2. Optical characterization of interface disorder in multi-quantum well structures
3. Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices
4. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
5. Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothing
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