Interface roughness of GaAs‐AlAs quantum wells grown by molecular‐beam epitaxy: Misorientation effects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341277
Reference14 articles.
1. Optical characterization of interface disorder in multi-quantum well structures
2. Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices
3. The Study of Laser Produced Plasma Behaviour Using Streak Photography
4. Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-AlxGa1-xAs (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
5. Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE
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1. Optics, morphology, and growth kinetics of GaAs/AlxGa1−xAs quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy;Physical Review B;2011-10-17
2. Enhanced diffusion in laser-annealed nonstoichiometric AlAs/GaAs heterostructures;Journal of Applied Physics;2000
3. TEM and Photoluminescence Investigations of InGaAs/GaAs Quantum Well Layers;Solid State Phenomena;1998-12
4. Compositional inhomogeneity and strain relaxation in InGaAs SQWs MOVPE-grown on tilted GaAs substrates;Materials Science and Engineering: B;1997-02
5. Influence of growth interruption on the heterointerface morphology ofInGaAsGaAs strained quantum wells;Journal of Crystal Growth;1996-12
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