Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-AlxGa1-xAs (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption-Reference-Cited by-同舟云学术

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Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-AlxGa1-xAs (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption

Published:1986-02-20 Issue:Part 2, No. 2 Volume:25 Page:L155-L158
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tanaka Masaaki,Sakaki Hiroyuki,Yoshino Junji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 113 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Interrupted Growth to Manipulate Phase Separation in DIP:C60 Organic Semiconductor Blends;The Journal of Physical Chemistry C;2018-01-10

5. Dynamical Birefringence: Electron-Hole Recollisions as Probes of Berry Curvature;Physical Review X;2017-11-21

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