Effects of real-time monitored growth interrupt on crystalline quality of AlN epilayer grown on sapphire by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. A study of dislocations in AlN and GaN films grown on sapphire substrates
2. Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm
3. Ultra‐flat and high‐quality AlN thin films on sapphire (0001) substrates grown by rf‐MBE
4. Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes
5. Influence of Al∕N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111);Nanoscale Research Letters;2015-02-28
2. Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring;Journal of Crystal Growth;2012-09
3. Effects of Interruption Growth on Properties of ZnO Active Layers Grown by Plasma-assisted Molecular Beam Epitaxy;Journal of the Korean Physical Society;2010-09-15
4. Improvement of crystal quality of AlN grown on sapphire substrate by MOCVD;Crystal Research and Technology;2010-05-28
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