Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring-Reference-Cited by-同舟云学术

Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

Published:2012-09 Issue:1 Volume:354 Page:188-192
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jmerik V.N.,Mizerov A.M.,Nechaev D.V.,Aseev P.A.,Sitnikova A.A.,Troshkov S.I.,Kop'ev P.S.,Ivanov S.V.

Funder

RFBR, Program of RAS “Novel materials and structures”

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Recent developments in surface studies of GaN and AlN

2. Reconstructions of the AlN(0001) surface

3. RHEED monitoring of AlN epitaxial growth by plasma-assisted molecular beam epitaxy

4. Demonstration of Distributed Bragg Reflectors for Deep Ultraviolet Applications

5. GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

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