GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance-Reference-Cited by-同舟云学术

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

Published:2008-11 Issue:9 Volume:104 Page:093501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kandaswamy P. K.,Guillot F.,Bellet-Amalric E.,Monroy E.,Nevou L.,Tchernycheva M.,Michon A.,Julien F. H.,Baumann E.,Giorgetta F. R.,Hofstetter D.,Remmele T.,Albrecht M.,Birner S.,Dang Le Si

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3003507

Reference89 articles.

1. Intersubband absorption saturation in InGaAs-AlAsSb quantum wells

2. Subpicosecond saturation of intersubband absorption in (CdS∕ZnSe)∕BeTe quantum-well waveguides at telecommunication wavelength

3. GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24μm

4. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers

5. Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells

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