Ultra‐flat and high‐quality AlN thin films on sapphire (0001) substrates grown by rf‐MBE-Reference-Cited by-同舟云学术

Ultra‐flat and high‐quality AlN thin films on sapphire (0001) substrates grown by rf‐MBE

Published:2003-11-24 Issue:7 Volume: Page:2511-2514
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Shen X. Q.¹,Tanizu Y.¹,Ide T.¹,Okumura H.¹

Affiliation:

1. Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology Central 2, 1‐1‐1 Umezono, Tsukuba, Ibaraki, 305‐8568, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303394

Reference9 articles.

1. The Polarity of GaN: a Critical Review

2. Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy

3. Laser emission under resonant pump in the emitting level of concentrated Nd:YAG ceramics

4. Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices

5. Low temperature sapphire nitridation: A clue to optimize GaN layers grown by molecular beam epitaxy

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