Impact of substrate nitridation on the growth of InN on In 2 O 3 (111) by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Impact of substrate nitridation on the growth of InN on In 2 O 3 (111) by plasma-assisted molecular beam epitaxy

Published:2016-04 Issue: Volume:369 Page:159-162
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Cho YongJin,Sadofev Sergey,Fernández-Garrido Sergio,Calarco Raffaella,Riechert Henning,Galazka Zbigniew,Uecker Reinhard,Brandt Oliver

Funder

European Union

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference21 articles.

1. Growth of wurtzite InN on bulk In2O3(111) wafers;Sadofev;Appl. Phys. Lett.,2012

2. Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: part I. Impact of the nitridation chemistry on material characteristics;Namkoong;J. Appl. Phys.,2002

3. Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: part II. Interplay between chemistry and structure of layers;Losurdo;J. Appl. Phys.,2002

4. Ultra-flat and high-quality AlN thin films on sapphire (0001) substrates grown by rf-MBE;Shen;Phys. Status Solidi C,2003

5. Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers;Grandjean;Appl. Phys. Lett.,1996

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2. Effect of Dy dopant on the ferromagnetic characteristics of indium nitride nanosheets;Materials Letters;2021-08

3. DFT Calculation on the Electronic Structure and Optical Properties of InxGa1-xN Alloy Semiconductors;Materials Science;2019-12-18

4. Theoretical prediction of a graphene-like structure of indium nitride: A promising excellent material for optoelectronics;Applied Materials Today;2017-06

5. Site-controlled crystalline InN growth from the V-pits of a GaN substrate;Applied Surface Science;2017-05

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