Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics-Reference-Cited by-同舟云学术

Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics

Published:2002-02-15 Issue:4 Volume:91 Page:2499-2507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Namkoong Gon,Doolittle W. Alan,Brown April S.,Losurdo Maria,Capezzuto Pio,Bruno Giovanni

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1435834

Reference43 articles.

1. A review of the metal–GaN contact technology

2. GaN based transistors for high power applications

3. A review of junction field effect transistors for high-temperature and high-power electronics

4. Surface roughness of nitrided (0001) Al[sub 2]O[sub 3] and AlN epilayers grown on (0001)Al[sub 2]O[sub 3] by reactive molecular beam epitaxy

5. Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

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