Site-controlled crystalline InN growth from the V-pits of a GaN substrate-Reference-Cited by-同舟云学术

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Site-controlled crystalline InN growth from the V-pits of a GaN substrate

Published:2017-05 Issue: Volume:405 Page:449-454
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kuo Chien-Ting,Hsu Lung-Hsing,Lai Yung-Yu,Cheng Shan-Yun,Kuo Hao-Chung,Lin Chien-Chung,Cheng Yuh-Jen

Funder

ministry of science and technology, Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference31 articles.

1. Potential performance of indium-nitride-based devices;O’Leary;Appl. Phys. Lett.,2006

2. THz generation from InN films due to destructive interference between optical rectification and photocurrent surge;Xu;Semicond. Sci. Technol.,2010

3. Terahertz radiation from nonpolar InN due to drift in an intrinsic in-plane electric field;Metcalfe;Appl. Phys. Express,2010

4. A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN;Gallinat;J. Appl. Phys.,2007

5. Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition;Kim;Phys. Status Solidi A,2012

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pit rim decomposition into multiple quantum dots on surfaces of epitaxial thin films grown on pit-patterned substrates;Journal of Applied Physics;2022-08-28

2. Fabrication of Ordered Arrays of Quantum Dot Molecules Based on the Design of Pyramidal Pit Patterns on Semiconductor Surfaces;Industrial & Engineering Chemistry Research;2019-11-08

3. High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel;Scientific Reports;2019-09-20

4. On the formation of multiple quantum dots inside elongated pits on semiconductor films deposited epitaxially on pit-patterned substrates;Materials Research Express;2019-06-12

5. Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−x−yN;Japanese Journal of Applied Physics;2019-05-14

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