Growth of wurtzite InN on bulk In2O3(111) wafers-Reference-Cited by-同舟云学术

Growth of wurtzite InN on bulk In2O3(111) wafers

Published:2012-10-22 Issue:17 Volume:101 Page:172102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sadofev Sergey,Cho YongJin,Brandt Oliver,Ramsteiner Manfred,Calarco Raffaella,Riechert Henning,Erwin Steven C.,Galazka Zbigniew,Korytov Maxym,Albrecht Martin,Uecker Reinhard,Fornari Roberto

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4761985

Reference15 articles.

1. Potential performance of indium-nitride-based devices

2. A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN

3. Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy

4. Effect of charged dislocation scattering on electrical and electrothermal transport inn-type InN

5. Low-field electron mobility in wurtzite InN

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