Improved electrical parameters of vacuum annealed Ni/4H-SiC (0001) Schottky barrier diode
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. SiC power Schottky and PiN diodes
2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
3. Experimental analysis of current conduction through thermally grown SiO2 on thick epitaxial 4H-SiC employing Poole-Frenkel mechanism
4. Experimental analysis of I‐V and C‐V characteristics of Ni/SiO2/4H‐SiC system with varying oxide thickness
5. Report on 4H–SiC JTE Schottky diodes
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1. Rejuvenation of degraded Zener diodes with the electron wind force;Applied Physics Express;2024-04-01
2. Lagging Thermal Annealing for Barrier Height Uniformity Evolution of Ni/4H-SiC Schottky Contacts;IEEE Transactions on Electron Devices;2024-04
3. Fabrication and Characterization of a Silicon Carbide Based Schottky Barrier Diode;Journal of Electronic Materials;2023-08-19
4. 4H-SiC Ohmic contacts formation by MoS2 layer intercalation: A first-principles study;Journal of Applied Physics;2022-12-28
5. Preparation and electrical properties of rGO-PtNPs/n-Si Schottky contact;Vacuum;2022-12
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