Lagging Thermal Annealing for Barrier Height Uniformity Evolution of Ni/4H-SiC Schottky Contacts-Reference-Cited by-同舟云学术

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Lagging Thermal Annealing for Barrier Height Uniformity Evolution of Ni/4H-SiC Schottky Contacts

Published:2024-04 Issue:4 Volume:71 Page:2805-2809
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Pristavu Gheorghe¹^ORCID,Brezeanu Gheorghe¹^ORCID,Dan-Theodor Oneata¹,Pascu Razvan¹^ORCID,Draghici Florin¹^ORCID,Serbanescu Matei¹^ORCID,Enache Andrei¹

Affiliation:

1. Department of Devices, Circuits and Electronic Architectures, National University of Science and Technology Politehnica Bucharest, Bucharest, Romania

Funder

Ministry of Research, Innovation and Digitization, CNCS-UEFISCDI, within PNCDI III

Ministry of Research, Innovation and Digitization, CCCDIUEFISCDI, within PNCDI III

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10436632.pdf?arnumber=10436632

Reference25 articles.

1. Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range

2. Two Packaging Solutions for High Temperature SiC Diode Sensors

3. A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology

4. Insight Into Ni/4H-SiC Schottky Barrier Inhomogeneity at Microscale Level

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