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SiC power Schottky and PiN diodes

Published:2002-04 Issue:4 Volume:49 Page:665-672
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Singh R.,Cooper J.A.,Melloch M.R.,Chow T.P.,Palmour J.W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/21406/00992877.pdf?arnumber=992877

Cited by 171 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review of the etched terminal structure of a 4H-SiC PiN diode;Journal of Semiconductors;2023-11-01

2. An Ultralow Forward Voltage SiC Trenched Junction-Pinched Barrier Rectifier (TBR);2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27

3. Fabrication and Characterization of a Silicon Carbide Based Schottky Barrier Diode;Journal of Electronic Materials;2023-08-19

4. Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation;IEEE Transactions on Nuclear Science;2023-08

5. Semi-Implantable Wireless Power Transfer (WPT) System Integrated With On-Chip Power Management Unit (PMU) for Neuromodulation Application;IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology;2023-06

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