Radiation-produced defects in n-GaN-Reference-Cited by-同舟云学术

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Radiation-produced defects in n-GaN

Published:2007-12 Issue: Volume:401-402 Page:315-318
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Emtsev V.V.,Davydov V.Yu.,Kozlovskii V.V.,Oganesyan G.A.,Poloskin D.S.,Smirnov A.N.,Tropp E.A.,Morozov Yu.G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Defect Donor and Acceptor in GaN

2. Optical detection of magnetic resonance in electron-irradiated GaN

3. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

4. Electron-irradiation-induced deep level in n-type GaN

5. Proton bombardment-induced electron traps in epitaxially grown n-GaN

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN and their annealing behavior;AIP Advances;2020-04-01

2. Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors;Journal of Applied Physics;2018-04-28

3. Correlative analysis of thein situchanges of carrier decay and proton induced photoluminescence characteristics in chemical vapor deposition grown GaN;Applied Physics Letters;2014-02-10

4. Review of radiation damage in GaN-based materials and devices;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-09

5. Electroreflectance study of the effect of γ radiation on the optical properties of epitaxial GaN films;Semiconductors;2012-03

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