Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN-Reference-Cited by-同舟云学术

Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

Published:1997-12 Issue: Volume:258-263 Page:1143-1148
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Emtsev Valentin V.¹,Davydov V.Yu.,Goncharuk I.N.,Kalinina Evgenia V.²,Kozlovski Vitalii V.³,Poloskin D.S.¹,Sakharov A.V.,Shmidt N.M.¹,Smirnov A.N.⁴,Usikov A.S.¹

Affiliation:

1. Russian Academy of Sciences

2. Ioffe Physicotechnical Institute RAS

3. St. Petersburg State Polytechnical University

4. National University of Science and Technology MISiS

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.258-263.1143.pdf

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of Temperature in the Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Charged Particles;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2022-06

2. Role of Low-Temperature Annealing in Modifying Silicon Carbide by Beams of Charged Particles;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2021-03

3. Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons;Materials Science Forum;2020-07

4. Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes;Technical Physics Letters;2020-03

5. Role of the Carbon Sublattice in n-SiС Conductivity Compensation;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2019-01