Correlative analysis of thein situchanges of carrier decay and proton induced photoluminescence characteristics in chemical vapor deposition grown GaN-Reference-Cited by-同舟云学术

Correlative analysis of thein situchanges of carrier decay and proton induced photoluminescence characteristics in chemical vapor deposition grown GaN

Published:2014-02-10 Issue:6 Volume:104 Page:062104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gaubas E.,Ceponis T.,Jasiunas A.,Kovalevskij V.,Meskauskaite D.,Pavlov J.,Remeikis V.,Tekorius A.,Vaitkus J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4865499

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5. Carrier and defect dynamics in photoexcited semi-insulating epitaxial GaN layers

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