Radiation-defect-dependent photoconductivity transients and photoluminescence in semi-insulating GaN

Author:

Gaubas E.,Kazlauskas K.,Tomašiūnas R.,Vaitkus J.,Žukauskas A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Study of recombination characteristics in MOCVD grown GaN epi-layers on Si;Semiconductor Science and Technology;2017-11-16

2. In situ characterization of radiation sensors based on GaN LED structure by pulsed capacitance technique and luminescence spectroscopy;Sensors and Actuators A: Physical;2017-11

3. Study of neutron irradiated structures of ammonothermal GaN;Journal of Physics D: Applied Physics;2017-02-28

4. In situ variations of the scintillation characteristics in GaN and CdS layers under irradiation by 1.6 MeV protons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12

5. Carrier decay and luminescence characteristics in hadron irradiated MOCVD GaN;Journal of Instrumentation;2014-12-19

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