Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1490618
Reference29 articles.
1. Nonalloyed Ti/Al Ohmic contacts to n‐type GaN using high‐temperature premetallization anneal
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3. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
4. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
5. Scanning tunneling microscope-induced luminescence of GaN at threading dislocations
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