Diffusion length of photoexcited carriers in GaN-Reference-Cited by-同舟云学术

Diffusion length of photoexcited carriers in GaN

Published:1997-12 Issue:1-3 Volume:50 Page:289-295
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Duboz J.Y,Binet F,Dolfi D,Laurent N,Scholz F,Off J,Sohmer A,Briot O,Gil B

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

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2. S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, Jpn. J. Appl. Phys. 35 (1996) 74. K. Itaya, M. Onomura, J. Nischio, L. Sugiura, S. Saito, M. Susuki, J. Rennie, S. Nunoue, M. Yamamoto, H. Fujimoto, Y. Kokubun, Y. Ohba, G. Hatakoshi, M. Ishikawa, Jpn. J. Appl. Phys. 35 (1996) L1315.

3. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers

4. Photovoltaic effects in GaN structures with p‐n junctions

5. Properties of a photovoltaic detector based on an n-type GaN Schottky barrier

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