In situ variations of recombination characteristics in MOCVD grown GaN epi-layers during 1.7MeV protons irradiation

Author:

Gaubas E.,Kovalevskij V.,Kadys A.,Gaspariunas M.,Mickevicius J.,Jasiunas A.,Remeikis V.,Uleckas A.,Tekorius A.,Vaitkus J.,Velicka A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Study of neutron irradiated structures of ammonothermal GaN;Journal of Physics D: Applied Physics;2017-02-28

2. Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices;ECS Journal of Solid State Science and Technology;2016

3. In situ variations of the scintillation characteristics in GaN and CdS layers under irradiation by 1.6 MeV protons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12

4. Theoretical analysis of proton irradiation effects on AlGaN/GaN high-electron-mobility transistors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09

5. Carrier decay and luminescence characteristics in hadron irradiated MOCVD GaN;Journal of Instrumentation;2014-12-19

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