In situ variations of recombination characteristics in MOCVD grown GaN epi-layers during 1.7MeV protons irradiation-Reference-Cited by-同舟云学术

In situ variations of recombination characteristics in MOCVD grown GaN epi-layers during 1.7MeV protons irradiation

Published:2013-07 Issue: Volume:307 Page:370-372
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Gaubas E.,Kovalevskij V.,Kadys A.,Gaspariunas M.,Mickevicius J.,Jasiunas A.,Remeikis V.,Uleckas A.,Tekorius A.,Vaitkus J.,Velicka A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. www.cern.ch/rd50.

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