Electroreflectance study of the effect of γ radiation on the optical properties of epitaxial GaN films-Reference-Cited by-同舟云学术

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Electroreflectance study of the effect of γ radiation on the optical properties of epitaxial GaN films

Published:2012-03 Issue:3 Volume:46 Page:302-305
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Belyaev A. E.,Klyui N. I.,Konakova R. V.,Lukyanov A. N.,Danilchenko B. A.,Sveshnikov J. N.,Klyui A. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782612030062.pdf

Reference18 articles.

1. E. Gaubas, P. Pobedinskas, J. Vaitkus, A. Uleckas, A. Zukauskas, A. Blue, Ruhman, K. M. Smith, E. Aujol, B. Beaumont, J.-P. Faurie, and P. Gibart, Nucl. Instrum. Meth. Phys. Res. A 552, 82 (2005).

2. V. V. Emtseva, V. Yu. Davydova, V. V. Kozlovskii, G. A. Oganesyana, D. S. Poloskina, A. N. Smirnova, E. A. Troppa, and Yu. G. Morozov, Physica B 401–402, 315 (2007).

3. V. V. Emtsev, V. Yu. Davydov, V. V. Kozlovskii, V. V. Lundin, D. S. Poloskin, A. N. Smirnov, N. M. Shmidt, A. S. Usikov, J. Aderhold, H. Klausing, D. Mistele, T. Rotter, J. Stemmer, O. Semchinova, and J. Graul, Semicond. Sci. Technol. 15, 73 (2000).

4. A. Castaldini, A. Cavallini, and L. Potenta, J. Phys.: Condens. Matter. 12, 10161 (2000).

5. M. Julier, J. Campo, B. Gil, J. Lascaray, and S. Nakamura, Phys. Rev. B 57, R6791 (1998).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence and optical studies of 4 MeV electron irradiated MOCVD grown GaN;Materials Chemistry and Physics;2021-07

2. Spectroscopic Studies of RF Discharge Plasma at Plasma-Chemical Etching of Gallium Nitride Epitaxial Structures;Ukrainian Journal of Physics;2017-03

3. Non-Monotonic $\gamma$-Ray Influence on Mo/n-Si Schottky Barrier Structure Properties;IEEE Transactions on Nuclear Science;2013-02

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